這個頁面上的內容需要較新版本的 Adobe Flash Player。

取得 Adobe Flash Player

Home> Service> Wet Processes for Metallization
Through-Silicon Via
Through-Silicon Via
1.Soluble Anode:
a.Copper electroplating formula for TSV
Highly selective copper filling formula for TSV metallization.
Copper TSV filling with an AR of 6.
Before heat treatment:
After heat treatment(500℃ .4hr):
The electroplating result of copper TSV filling
b.Nickel-tungsten electroplating formula for TSV filling

To solve the CTE mismatch issue between copper and silicon substrate.
To improve the hardness and corrosion-resistance of the deposited metal.

Before heat treatment:
After heat treatment(500℃ .4hr):
The filling performance of NiW plating
c.Using Graphene as a Barrier and Conducting Layers in TSV
Cu/rGO/SiO2/Si
 (a)Graphene can be used as both barrier and seed layer to decrease process steps of TSV.
 (b)Graphene coating is a wet process with a low cost.
 (c)Caoting process has no deposition gradient along TSV, so that it has no overhang issue.
 (d)Simple graphene coating process can effectively shorten the overall process time of
   Cu TSV filling.
 

After thermal annealing at 400℃ for 4hr.

AR:5, Diameter:10μm

 

After thermal annealing and Si Removal (400℃, 4hr)

AR:5, Diameter: 10μm

 

c.Using Graphene as Barrier and Conducting Layers

Nickel-tungsten alloy filling formula (NiW/rGO/SiO2/Si)
 (a) Solve the CTE mismatch issue between Cu and silicon in TSV.
 (b) NiW/rGO/SiO2/Si structure has no Cu, therefore it has no Cu diffusion issue.
 

NiW/rGO-TSV after thermal annealing at 500℃ for 4hr.

AR:5, Diameter:10μm

 

NiW/rGO-TSV after thermal annealing at 400℃ for 4hr and Si removal.

AR:5, Diameter: 10μm
 
 
     Before thermal test After thermal test (500℃, 4hr)
 


Copper-filling formula for high aspect ratio(Cu / rGO / SiO2 / Si )

AR: 10, Diameter: 10μm

 

<--
FIB image of Cu/rGO-TSV
-->
FIB image of Cu/rGO-TSV after thermal test (500℃, 4hr)
cross section in XY-plane of Cu/rGO-TSV: AR: 10, Diameter: 100μm

Cross section in XY-plane of Cu/rGO-TSV

 

2.Dimensionally Stable Anode (DSA)
Feature:
  • DSA has a long lifetime.
  • DSA releases uniform current density distribution.
  • DSA has no Cu, so that it does not react with accelerator to accumulate thiolate-Cu(I) in a Cu plating bath.
high aspect ratio
AR:6.6
Diameter:10μm
HomeIntroNewsServicesAlbumDownloadContact Us
All images and content of this website reference the information required for the present system,
Disclaimer National Chung Hsing University Department of Chemical Engineering ESC.
Tel:886-4-22840510 ext. 905 Fax:886-4-22854734  e-mailMail
Address:402 No.250, Guoguang Rd., South Dist., Taichung City 402, Taiwan (R.O.C.)「工程三館-化工暨材料大樓」  Website Design:ChingMei